| 摘要 |
A method for manufacturing a fine pattern of a semiconductor device comprising: forming hard mask patterns having a thickness of t1 over an underlying layer; forming a light penetrable thin film having a thickness of t2 over the hard mask pattern; forming a light absorbable thin film over light penetrable thin film; performing an exposure process on the resulting structure without use of an exposure mask while controlling an amount of exposure energy such that an exposure light reaches a depth T measured from a top surface of the light penetrable thin film to a top surface of the underlying layer such that t2<T≦̸t1+t2; performing a developing process on the resulting structure to form an organic mask pattern between the hard mask patterns; and etching the underlying layer using the hard mask pattern and the organic mask pattern as an etching mask to form an underlying layer pattern.
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