| 摘要 |
A solid state memory system includes a first memory chip that includes a plurality of storage elements, and a controller. Each of the plurality of storage elements have a measurable parameter that varies between a lower limit and an upper limit. The controller receives write data, converts the write data to N target values, and transmits the N target values to the first memory chip. The first memory chip adjusts corresponding measurable parameters of N storage elements of the plurality of storage elements to the N target values, where N is an integer greater than zero.
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