发明名称 |
Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same |
摘要 |
A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.
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申请公布号 |
US7977793(B2) |
申请公布日期 |
2011.07.12 |
申请号 |
US20070939666 |
申请日期 |
2007.11.14 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG DONG HA;YEOM SEUNG JIN;KIM BAEK MANN;LEE YOUNG JIN;KIM JEONG TAE |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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