发明名称 Memory having shared storage material
摘要 An integrated circuit includes a bit line, a plurality of access devices coupled to the bit line, and a plate of phase change material. The integrated circuit includes a plurality of phase change elements contacting the plate of phase change material and a plurality of first contacts. Each first contact is coupled between an access device and a phase change element.
申请公布号 US7977661(B2) 申请公布日期 2011.07.12
申请号 US20070759446 申请日期 2007.06.07
申请人 QIMONDA AG 发明人 PHILIPP JAN BORIS;HAPP THOMAS
分类号 H01L21/00 主分类号 H01L21/00
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