发明名称 |
Methods for producing solid-state imaging device and electronic device |
摘要 |
A method for producing a solid-state imaging device includes steps of: forming transfer electrodes on a substrate having a plurality of light-sensing portions through a gate insulating layer so that the light-sensing portions are exposed; forming a planarized insulating layer on the substrate to cover the transfer electrodes formed on the substrate; forming openings in the planarized insulating layer so that each of the transfer electrodes is partly exposed out of the planarized insulating layer at a predetermined position; forming a wiring material layer so that the openings are filled with the wiring material layer; forming a resist layer on the wiring material layer; exposing and developing the resist layer so that only the resist layer in a predetermined area covering the openings is left; and patterning the wiring material layer using the exposed and developed resist layer to form connection wirings connected to the transfer electrodes by the openings.
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申请公布号 |
US7977140(B2) |
申请公布日期 |
2011.07.12 |
申请号 |
US20090382713 |
申请日期 |
2009.03.23 |
申请人 |
SONY CORPORATION |
发明人 |
TAKEDA TAKESHI;ANDO YUKIHIRO;OKAMOTO MASAKI;OKADA MASAYUKI;TAKIMOTO KAORI;KUGIMIYA KATSUHISA;KIMURA TADAYUKI |
分类号 |
H01L21/00;H01L21/339;H01L27/148;H01L29/762;H04N5/359;H04N5/367;H04N5/3728 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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