发明名称 |
Methods for forming back-end-of-line resistive semiconductor structures |
摘要 |
In one embodiment, a second metal line embedded in a second dielectric layer overlies a first metal line embedded in a first dielectric layer. A portion of the second dielectric layer overlying the first metal line is recessed employing a photoresist and the second metal line as an etch mask. A doped semiconductor spacer is formed within the recess to provide a resistive link between the first metal line and the second metal line. In another embodiment, a first metal line and a second metal line are embedded in a dielectric layer. An area of the dielectric layer laterally abutting the first and second metal lines is recessed employing a photoresist and the first and second metal lines as an etch mask. A doped semiconductor spacer is formed on sidewalls of the first and second metal lines, providing a resistive link between the first and second metal lines.
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申请公布号 |
US7977201(B2) |
申请公布日期 |
2011.07.12 |
申请号 |
US20080191633 |
申请日期 |
2008.08.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABADEER WAGDI W.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;RANKIN JED H.;ROBISON ROBERT;SHI YUN;TONTI WILLIAM R. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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