发明名称 |
Dynamic random access memory (DRAM) cells and methods for fabricating the same |
摘要 |
A method for fabricating a memory cell is provided. A trench is formed in a semiconductor structure that comprises a semiconductor layer, and a trench capacitor is formed in the trench. Conductivity determining impurities are implanted into the semiconductor structure to create a well region in the semiconductor layer that is directly coupled to the trench capacitor. A gate structure is formed overlying a portion of the well region. Conductivity determining ions are then implanted into other portions of the well region to form a source region and a drain region, and to define an active body region between the source region and the drain region. The active body region directly contacts the trench capacitor.
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申请公布号 |
US7977172(B2) |
申请公布日期 |
2011.07.12 |
申请号 |
US20080330282 |
申请日期 |
2008.12.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHO HYUN-JIN;DHONG SANG H.;GOO JUNG-SUK;MANDAL GURUPADA |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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