发明名称 |
Semiconductor device, method of fabricating the same, and pattern generating method |
摘要 |
A semiconductor device according to an embodiment of the present invention has: a semiconductor substrate; an interlayer insulating film formed above the semiconductor substrate; a protective film formed on the interlayer insulating film, the protective film having a higher density than that of the interlayer insulating film; at least one of a wiring and a dummy wiring formed in the interlayer insulating film and the protective film; and a separation wall formed within the interlayer insulating film so as to surround a low density region to separate the low density region from other regions, a sum of covering densities of the wiring and the dummy wiring being lower than a predetermined prescribed value in the low density region.
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申请公布号 |
US7977795(B2) |
申请公布日期 |
2011.07.12 |
申请号 |
US20070619338 |
申请日期 |
2007.01.03 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIGASHI KAZUYUKI;MATSUNAGA NORIAKI |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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