发明名称 |
Bulk acoustic wave device with a semiconductor layer |
摘要 |
A bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes and a semiconductor layer arranged between the first and second electrodes. The semiconductor layer is electrically isolated from the first electrode.
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申请公布号 |
US7977850(B2) |
申请公布日期 |
2011.07.12 |
申请号 |
US20080040088 |
申请日期 |
2008.02.29 |
申请人 |
AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. |
发明人 |
ALLAH MOHAMED ABD;WEBER WERNER;THALHAMMER ROBERT;KAITILA JYRKI |
分类号 |
H01L41/08 |
主分类号 |
H01L41/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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