| 发明名称 |
Integrated circuit having a semiconductor substrate with a barrier layer |
| 摘要 |
An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.
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| 申请公布号 |
US7977798(B2) |
申请公布日期 |
2011.07.12 |
| 申请号 |
US20070828865 |
申请日期 |
2007.07.26 |
| 申请人 |
INFINEON TECHNOLOGIES AG;QIMONDA AG |
发明人 |
DERTINGER STEPHAN;MARTIN ALFRED;HASLER BARBARA;SOMMER GRIT;BINDER FLORIAN |
| 分类号 |
H01L23/495;H01L23/48 |
主分类号 |
H01L23/495 |
| 代理机构 |
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代理人 |
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| 主权项 |
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