| 摘要 |
A method for fabricating a metal/insulator/metal (MIM) structure capacitor includes forming a nitride film that is an insulating layer on a bottom electrode metal layer; forming titanium/titanium nitride (Ti/TiN) that is a top electrode metal layer on the nitride film; coating photo-resist on the top electrode metal layer and patterning a photo-resist layer; selectively etching the top metal electrode layer so that the nitride film remains using the patterned photo-resist layer as an etching mask and using the nitride film as an end point; and removing the remaining nitride film.
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