| 摘要 |
To provide a semiconductor layer in which a GaN system epitaxial layer having high crystal quality can be obtained. The semiconductor layer includes a &bgr;-Ga2O3 substrate 1 made of a &bgr;-Ga2O3 single crystal, a GaN layer 2 formed by subjecting a surface of the &bgr;-Ga2O3 substrate 1 to nitriding processing, and a GaN growth layer 3 formed on the GaN layer 2 through epitaxial growth by utilizing an MOCVD method. Since lattice constants of the GaN layer 2 and the GaN growth layer 3 match each other, and the GaN growth layer 3 grows so as to succeed to high crystalline of the GaN layer 2, the GaN growth layer 3 having high crystalline is obtained.
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