发明名称 Inverter, method of manufacturing the same, and logic circuit including the inverter
摘要 Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.
申请公布号 US7977978(B2) 申请公布日期 2011.07.12
申请号 US20090591654 申请日期 2009.11.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YIN HUAXIANG;SONG I-HUN;KIM CHANG-JUNG;KIM SANG-WOOK;KIM SUN-IL
分类号 H03K19/00 主分类号 H03K19/00
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