| 摘要 |
A sensing enable signal control circuit determines a driving timing of an I/O sense amplifier based on a read-out result of data, which is stored in a dummy cell of a semiconductor memory apparatus. The sensing enable signal control circuit in a semiconductor memory apparatus includes a detection code generating unit configured to output a detection code according to a voltage level of dummy cell data, which are read out from a dummy cell through at least one read operation, in response to a column select enable signal, and a multiplexer configured to receive the detection code and a default code and output a delay code to delay a sensing enable signal.
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