氮化铝烧结体，半导体制造装置用组件及氮化铝烧结体之制造方法,申请号TW096108414-传众专利搜索

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发明名称	氮化铝烧结体，半导体制造装置用组件及氮化铝烧结体之制造方法
摘要
申请公布号		申请公布日期	2011.07.11
申请号	TW096108414	申请日期	2007.03.12
申请人	碍子股份有限公司	发明人	吉川润;小林义政;山田直仁
分类号	C04B35/583;H01L21/683;C04B35/64	主分类号	C04B35/583
代理机构		代理人	洪澄文台北市大安区信义路4段279号3楼
主权项	一种氮化铝烧结体，包含氮化铝及(Sm,Ce)Al11O18以及0.16~0.61重量%的C与0.24~2.33重量%的Mg之至少一者，Sm与Ce之含有量的莫耳比Sm/Ce在0.05以上0.3以下的范围内，其特征在于：在氮化铝粒子之粒界上，由(Sm,Ce)Al11O18所形成之导电路径连续形成之同时，氮化铝粒子内之C与Mg之至少一方固溶。
地址	日本

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