METHOD FOR PRODUCING OF INGOTS OF MULTICRYSTAL SILICON BY INDUCTION

摘要

The invention relates to methods for producing of multicrystals silicon by induction. In accordance with the invention a method comprises the supply of silicon charge in melting space of cooled crucible circled by inductor, formation of smelt glass and melting, at which mass rate of supply of silicon charge and withdrawal rate of ingot are set so that to provide a position of smelt glass below the top area of inductor, but not below 1/3 its heights, and is kept position of smelt glass at same level at control of one from starting parameters of power supply of inductor. The method allows to produce ingots of multicrystal silicon adapted for producing elements of solar batteries and is characterized by increased efficiency and decreased of specific consumptions of electric power.