发明名称 SEMICONDUCTOR DEVICE HAVING FIELD STABILIZATION FILM AND METHOD
摘要 In one embodiment, a high voltage semiconductor device is formed with a first dielectric layer and a charge stabilization layer comprising a flowable glass formed over the first dielectric layer.
申请公布号 HK1097100(A1) 申请公布日期 2011.07.08
申请号 HK20070101798 申请日期 2007.02.15
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C. 发明人 SHANGHUI LARRY TU;TAKESHI ISHIGURO;FUMIKA KURAMAE;RYUJI OMI
分类号 H01L 主分类号 H01L
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