| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which stably performs control of leak current in a standby mode. <P>SOLUTION: Bit lines CBT and CBB for ground control are connected with an SRAM cell CL. A power supply line ARVSS is connected with the bit lines CBT and CBB for ground control. N-channel MOS transistors N51 and N52 have control electrodes connected to a control line CT and are provided between a ground power supply and a power supply line ARVSS for control by a ground control signal CNT_ARVSS supplied from a standby control circuit. An N-channel MOS transistor N1 is connected to the ARVSS power supply line via a diode. Power supply of a row decoder RD is controlled according to a standby signal STDBY supplied from the standby control circuit. The N-channel MOS transistor N1 pulls down a word line WL, and is controlled according to the standby signal STDBY. <P>COPYRIGHT: (C)2011,JPO&INPIT |
