| 发明名称 |
METHOD MANUFACTRUING OF SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to form a copper wire with PD particles, thereby increasing the bonding strength of a copper wire. CONSTITUTION: A capping film and a second interlayer insulating film are successively formed on a first interlayer insulating film with a metal wire(10). A contact hole with a dual damascene structure exposes a part of the metal wire. The contact hole is formed the first and second interlayer insulating films and the capping film. A barrier film and a copper film are formed on the entire surface with the contact hole. A copper wire includes Pd particles in the contact hole. A wire is formed by a wire bonding process.</p> |
| 申请公布号 |
KR20110077616(A) |
申请公布日期 |
2011.07.07 |
| 申请号 |
KR20090134243 |
申请日期 |
2009.12.30 |
| 申请人 |
DONGBU HITEK CO., LTD. |
发明人 |
LEE, MIN HYUNG;PARK, CHUL HO |
| 分类号 |
H01L21/28;H01L21/60 |
主分类号 |
H01L21/28 |
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