| 摘要 |
PURPOSE: A circuit and method for inputting data of a semiconductor memory device are provided to increase a margin for storing repair data in a repair page buffer according to an address comparison result. CONSTITUTION: A main page buffer unit(130) stores external input data. A temporary latch(140) temporarily stores external input data while external input data is stored in the main page buffer unit. An address comparing unit compares an external input address with a pre-stored repair address to determine whether the external input address is a main address or a repair address to output a main address signal or a repair address signal. A repair page buffer unit(180) stores the external input data in response to the repair address signal outputted from the address comparing unit. |
