| 摘要 |
<p>PURPOSE: A method for compensating for optical proximity effect is provided to enhance speed of a compensation work, to reduce runtime and to compensate for a mask design of a micro pattern by being applied only to a region whose DOF(Depth of Focus) is lower than a reference value. CONSTITUTION: A target pattern is designed(100). A process window modeling is performed about the design(200). A marking area whose DOF is lower than a reference value is set(300). A normal optical proximity effect compensation is performed with respect to a region except for the marking area(400). An ILT(Inverse Lithography Technique) optical proximity effect compensation is performed about the marking area(500).</p> |
