| 摘要 |
<p>PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to change a program state by structurally breaking down a gate oxide layer due to thermal expansion. CONSTITUTION: A well is formed on a semiconductor substrate of an active area. A device isolation layer is formed on the semiconductor substrate of a field area near the active area. An insulation layer(40) is formed on the semiconductor substrate of the active area. A gate pattern(50) is formed on the partial upper sides of the insulation layer and the device isolation layer. A plurality of contacts(60) for a current input is formed on one side of the upper side of the gate pattern. A contact for a current output is formed on the other side of the upper side of the gate pattern. A first metal layer is connected to the contact for the current input. A second metal layer is connected to the contact for the current output.</p> |
