| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the quality of a device by forming an air layer in an insulation layer. CONSTITUTION: A trench type gate pattern is formed on a substrate(10). A first insulation layer is formed on the substrate with the gate pattern. A hole is formed by etching a part of the first insulation layer. A second insulation layer is formed on the first insulation layer. The first insulation layer and the second insulation layer are patterned by an etching process. An air layer(61) is formed in the first insulation layer by the deposition process of the second insulation layer.</p> |
