| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor memory device is provided to form the uniform side wall of a gate electrode by etching a floating gate and a control gate which are growth in an oxidation process. CONSTITUTION: In a method for manufacturing a semiconductor memory device, a tunnel oxide(110a) is formed on a semiconductor substrate. A floating gate(120a) is formed on the tunnel oxide film. An inter-layer insulating film(140a) is formed on the floating gate. A control gate(160a) is formed on the inter-layer insulating film. The tunnel oxide film, the floating gate, the inter-layer insulating film, and the control gate are etched by using a hard mask pattern as a mask.</p> |
