SEMICONDUCTOR DEVICE WITH BURIED BITLINE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device including a buried bit line and a manufacturing method thereof are provided to efficiently control the dose and depth of a junction by forming the junction with a selective epitaxial growth method and a recess. CONSTITUTION: An active area(24) with a sidewall is formed by etching a substrate(21A). Active areas are divided by a trench(25). An insulation layer(201) with a contact area is formed to selectively expose a part of the sidewall of the active area. A recess(202) is formed by etching a part of the sidewall of the active area exposed by a contact area. A junction(203) fills the recess.