| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to prevent a poly silicon pattern formed as a select gate from being etched by forming a protection layer on the sidewall of a photo resist pattern. CONSTITUTION: A first memory gate(301) and a second memory gate(302) are formed on a semiconductor substrate(100). An oxide layer is formed on the semiconductor substrate with a first memory gate and a second memory gate. A poly silicon pattern(500) is formed on the oxide layer of both sides of first and second memory gates. The poly silicon pattern between the first and second memory gates is exposed by forming a photoresist pattern. A protection layer is formed on the sidewall of the photoresist pattern. A select gate composed of the poly silicon pattern is formed on one of both sidewalls of the first and second memory gates.</p> |
