| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to control a void on a pad poly silicon layer through a thermal process by forming a pad poly silicon layer with a nano grain poly silicon layer. CONSTITUTION: A pad oxide layer and a pad poly silicon layer made of a nano grain poly silicon layer are successively formed on a semiconductor substrate(100). A pad poly silicon layer pattern(110) and a pad oxide pattern are formed by patterning the pad poly silicon layer and the pad oxide layer. A trench is formed by etching the semiconductor substrate exposed by the pad poly silicon layer pattern and the pad oxide layer pattern. A device isolation layer(140) is formed to bury a trench. A mask pattern is formed by masking the cell area and exposing the peripheral area. A pad poly silicon layer pattern is removed on the exposed peripheral area.
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