| 摘要 |
PROBLEM TO BE SOLVED: To promptly deposit a titanium nitride film when depositing the titanium nitride film by using a reaction gas in a vacuum vessel and also to obtain the titanium nitride film having a smooth surface shape. SOLUTION: This film-depositing method can conduct cycles of supplying the reaction gas (cycles of depositing film of reaction product) at a high speed, by relatively rotating a turntable 2 and each gas nozzles 31, 32, 41 and 42 at 100 rpm or more when depositing the titanium nitride film, and accordingly can promptly deposit the thin film; and also can obtain the film having the smooth surface, because the time between the cycles is very short, and accordingly before the grain size of a reaction product produced on the surface of a substrate increases due to the crystallization, a layer of a subsequent reaction product is stacked on an upper layer side. COPYRIGHT: (C)2011,JPO&INPIT |
