发明名称 |
Bond Pad Connection to Redistribution Lines Having Tapered Profiles |
摘要 |
An integrated circuit structure includes a semiconductor substrate having a front side and a backside. A through-silicon via (TSV) penetrates the semiconductor substrate, wherein the TSV has a back end extending to the backside of the semiconductor substrate. A redistribution line (RDL) is formed over the backside of the semiconductor substrate and connected to the back end of the TSV. A passivation layer is over the RDL with an opening formed in the passivation layer, wherein a portion of a top surface of the RDL and a sidewall of the RDL are exposed through the opening. A metal finish is formed in the opening and contacting the portion of the top surface and the sidewall of the RDL.
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申请公布号 |
US2011165776(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US201113050424 |
申请日期 |
2011.03.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSU KUO-CHING;CHEN CHEN-SHIEN;HUANG HON-LIN |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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