| 发明名称 |
Method of operating nonvolatile memory device |
| 摘要 |
Provided is a method of operating a nonvolatile memory device to perform a programming operation or an erase operation. The method includes applying a composite pulse including a direct current (DC) pulse and an AC perturbation pulse to the nonvolatile memory device to perform the programming operation or the erase operation.
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| 申请公布号 |
US2011164457(A1) |
申请公布日期 |
2011.07.07 |
| 申请号 |
US201113064265 |
申请日期 |
2011.03.15 |
| 申请人 |
SEOL KWANG-SOO;PARK SANG-JIN;LEE SUNG-HOON;PARK SUNG-IL;KIM JONG-SEOB |
发明人 |
SEOL KWANG-SOO;PARK SANG-JIN;LEE SUNG-HOON;PARK SUNG-IL;KIM JONG-SEOB |
| 分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
| 代理机构 |
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