发明名称 CLEANING METHOD FOR REMOVING POST VIA ETCH RESIDUE
摘要 The present inyention relates generally to a method for effectively removing post via etch residue (1) including fluorinated by-product (12) and hence enhances functional product yield by first treating the etched wafer with a preliminary solvent cleaning treatment (4) prior to conventional plasma resist stripping treatment (6) and thereafter a subsequent solvent cleaning treatment
申请公布号 WO2011081512(A2) 申请公布日期 2011.07.07
申请号 WO2010MY00252 申请日期 2010.11.08
申请人 MIMOS BERHAD;BIN MAMAT, HAZIAN;BIN ABD LATIF, ADZMIR;BIN MAN, MAZLIN;BINTI MOHAMAD, ZALIHA;BINTI MHD ZAIN, AZLINA 发明人 BIN MAMAT, HAZIAN;BIN ABD LATIF, ADZMIR;BIN MAN, MAZLIN;BINTI MOHAMAD, ZALIHA;BINTI MHD ZAIN, AZLINA
分类号 H01L21/302;H01L21/3065 主分类号 H01L21/302
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