| 摘要 |
PURPOSE: An electrically erasable programmable ROM is provided to supply high voltage to an EEPROM with lower voltage than the breakdown voltage of an NMOS transistor by using a voltage switch comprised of a NAND gate and a PMOS transistor. CONSTITUTION: In an electrically erasable programmable ROM, a control capacitor(110) and an erase capacitor(120) are serially connected with each other. The gate of an NMOS transistor(130) is connected between the control capacitor and the erase capacitor. The drain of a read transistor(160) is connected to the drain of the NMOS transistor. A PMOS transistor(140) supplies high voltage to a first node to program an EEPROM cell. A NAND gate(170) receives a word line enable signal(WLEn) and a control signal(CG). |
