| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to prevent the pinch-off a connector region by making a deflection direction to the outside of a gate. CONSTITUTION: In a method for manufacturing an image sensor, a photo diode doped region(202) is formed in a semiconductor substrate(201). A connector region is formed by implanting impurities on the top side of the photo diode doped region A drain region is formed by implanting impurities on the surface of a semiconductor substrate. The first impurities are implanted on the surface of the semiconductor substrate. A gate electrode is formed on the semiconductor substrate.
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