| 摘要 |
PURPOSE: A trench gate MOSFET and a method for fabricating of the same are provided to control the interval between a buried oxide region and a trench region by controlling the thickness of a sidewall formed on the both sides of a nitride oxide film. CONSTITUTION: In a trench gate MOSFET and a method for fabricating of the same, a first conductive type impurity region(120) and a second conductive body region(140) are successively formed on a first conductive type semiconductor substrate(100). An implant blocking layer covering a trench region is formed on the second conductive body domain. The sidewall is formed in the both sides of the implant blocking layer. A buried oxidative region(200) is formed on the first conductive type impurity region. The implant blocking layer and the sidewall are removed.
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