发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, WIRING BASE MATERIAL FOR CONNECTING SEMICONDUCTOR ELEMENT, WIRING BOARD FOR MOUNTING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is thinned as a first characteristic and has excellent high connection reliability as a second characteristic. <P>SOLUTION: There is provided the semiconductor device including a conductive metal layer pattern having a semiconductor element electrically connected thereto and a conductive metal layer pattern for wiring via a die-bonding material on the lower part of the semiconductor element, wherein the patterns are sealed with a sealing resin. In the semiconductor device, the conductive metal layer patterns are partly exposed to protrude in the thickness direction. The amount of protrusion of the conductive metal layer is a thickness of 1 μm or more in the thickness direction and 1/2 or less of the thickness of the metal layer, and a portion with the maximum width of a cross sectional shape is buried in the sealing material or the die-bonding material. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011134960(A) |
申请公布日期 |
2011.07.07 |
申请号 |
JP20090294559 |
申请日期 |
2009.12.25 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
NAOYUKI SUSUMU;TOSAKA MINORU |
分类号 |
H01L23/12;H01L21/56 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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