发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, WIRING BASE MATERIAL FOR CONNECTING SEMICONDUCTOR ELEMENT, WIRING BOARD FOR MOUNTING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is thinned as a first characteristic and has excellent high connection reliability as a second characteristic. <P>SOLUTION: There is provided the semiconductor device including a conductive metal layer pattern having a semiconductor element electrically connected thereto and a conductive metal layer pattern for wiring via a die-bonding material on the lower part of the semiconductor element, wherein the patterns are sealed with a sealing resin. In the semiconductor device, the conductive metal layer patterns are partly exposed to protrude in the thickness direction. The amount of protrusion of the conductive metal layer is a thickness of 1 &mu;m or more in the thickness direction and 1/2 or less of the thickness of the metal layer, and a portion with the maximum width of a cross sectional shape is buried in the sealing material or the die-bonding material. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011134960(A) 申请公布日期 2011.07.07
申请号 JP20090294559 申请日期 2009.12.25
申请人 HITACHI CHEM CO LTD 发明人 NAOYUKI SUSUMU;TOSAKA MINORU
分类号 H01L23/12;H01L21/56 主分类号 H01L23/12
代理机构 代理人
主权项
地址