| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To balance variations in characteristics of complementary transistors used for a sense amplifier. <P>SOLUTION: The semiconductor memory device includes: memory cells MC which store data; and the sense amplifier which maintains a complementary state based on the result of comparison between a read signal from the memory cells MC and a reference signal. The read signal and the reference signal, which are input to the sense amplifier, are exchanged between nodes NA and NB of the sense amplifier. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
