发明名称 |
MEMORY ELEMENT, AND METHOD OF OPERATING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory element having bipolar characteristics, and to provide a method of operating the same. <P>SOLUTION: The memory element includes a memory cell MC1. The memory cell includes a bipolar memory element and bidirectional switching elements. The bidirectional switching elements S1, S2 are connected to both ends of the bipolar memory element. The bidirectional switching elements include a first switching element and a second switching element. The first switching element is connected to one end of the bipolar memory element and may have a first switching direction. The second switching element is connected to the other end of the bipolar memory element and may have a second switching direction. The second switching direction can be opposite to the first switching direction. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011135071(A) |
申请公布日期 |
2011.07.07 |
申请号 |
JP20100276764 |
申请日期 |
2010.12.13 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE MYOUNG-JAE;LEE TOSHU;LEE CHANG-BUM;LEE SEUNG-RYUL |
分类号 |
H01L27/105;G11C13/00;H01L29/47;H01L29/861;H01L29/872;H01L45/00;H01L49/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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