| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench gate type semiconductor device for striking a balance between the increase of density of a channel with the reduction of base resistance of a parasitic BJT, and to provide a method of manufacturing the same. SOLUTION: In this trench gate type semiconductor device, a trench gate structure includes an insulator 6 located on a gate electrode 5 and filled in an upper part of a first trench 4, a lower end face of a source region 7 is located below the upper face of the gate electrode 5, a surface of a semiconductor substrate part sandwiched by a plurality of first trenches 4 has a slope having a maximum aperture width in the surface, a bottom part thereof includes a second trench 8 located below a lower end face of the source region 7, and the source region 7 and a p-type body contact region 9 in contact with the first trench 4 are included in an inner surface of the second trench 8. COPYRIGHT: (C)2011,JPO&INPIT
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