发明名称 |
SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES |
摘要 |
An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. The interconnect structure further includes a dielectric cap located on at least an upper surface of the composite M-MOx cap.
|
申请公布号 |
US2011162874(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US20100683590 |
申请日期 |
2010.01.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NGUYEN SON VAN;GRILL ALFRED;HAIGH, JR. THOMAS J.;SHOBHA HOSADURGA;VO TUAN A. |
分类号 |
H05K1/09;B05D3/04;B05D3/06;B05D5/12 |
主分类号 |
H05K1/09 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|