METHOD FOR MANUFACTURING AN ELECTRONIC COMPONENT, ELECTRONIC COMPONENT, PLASMA TREATMENT DEVICE, CONTROL PROGRAM, AND RECORDING MEDIUM

摘要

Provided is a method for manufacturing an electronic component. Said method: prevents or reduces agglomeration of a low-melting-point metal that is formed into a film at high temperatures; forms a barrier layer with sufficient barrier performance and wettability; and fills a depression with a low-melting-point metal such that said metal closely follows the contours of said depression. The provided method includes: a procedure in which a first bias power is applied to an electrode (301) in contact with an object being treated (306), under for example 4 to 20 Pa of pressure, and plasma treatment is used to form a first barrier layer (404) comprising TiNx on top of the object being treated (306); a procedure in which either no bias power or a second bias power which provides ion-injection energy but is lower than the first bias power is applied to the electrode (301) under for example 4 to 20 Pa of pressure, and plasma treatment is used to form a second barrier layer (405) comprising TiNx on top of the first barrier layer; and a procedure in which a low-melting-point metal (406) is added on top of the second barrier layer (405).