发明名称 ELECTROSTATIC DISCHARGE PROTECTION DEVICE
摘要 <p>PURPOSE: An electrostatic discharge protection device is provided to increase a sustain voltage by including a first well and a second well with higher impurity doping density than the impurity doping density of the first well. CONSTITUTION: The impurity doping density of a first conductive first well(22A) is different from the impurity doping density of a first conductive second well(22B). A gate(23) is formed on the first well. A second conducive source area(25) is formed on the first well of one side of the gate. A second conductive drift area(26) crosses the first well and the second well in the other side of the gate. A second conductive drain area(27) is formed on the drift area and is overlapped with the second well.</p>
申请公布号 KR20110077889(A) 申请公布日期 2011.07.07
申请号 KR20090134567 申请日期 2009.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LIM, DONG JU;YIM, WOON HA
分类号 H01L23/60;H01L27/04 主分类号 H01L23/60
代理机构 代理人
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