发明名称 |
ELECTROSTATIC DISCHARGE PROTECTION DEVICE |
摘要 |
<p>PURPOSE: An electrostatic discharge protection device is provided to increase a sustain voltage by including a first well and a second well with higher impurity doping density than the impurity doping density of the first well. CONSTITUTION: The impurity doping density of a first conductive first well(22A) is different from the impurity doping density of a first conductive second well(22B). A gate(23) is formed on the first well. A second conducive source area(25) is formed on the first well of one side of the gate. A second conductive drift area(26) crosses the first well and the second well in the other side of the gate. A second conductive drain area(27) is formed on the drift area and is overlapped with the second well.</p> |
申请公布号 |
KR20110077889(A) |
申请公布日期 |
2011.07.07 |
申请号 |
KR20090134567 |
申请日期 |
2009.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LIM, DONG JU;YIM, WOON HA |
分类号 |
H01L23/60;H01L27/04 |
主分类号 |
H01L23/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|