| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to implement high integration by three-dimensionally manufacturing the semiconductor device. CONSTITUTION: Silicon is grown on the surface of a silicon substrate(1). Silicon(3) grown on the lower surface of the trench is removed. Gate dielectric materials(5) and gate materials(6) are formed on the upper surface of the grown silicon substrate. A source and a drain are formed on the sidewall(7) of the trench. A source or drain electrode(8) are extended from the inside of the trench.</p> |
