| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the deterioration of a DIBL(Brain Induced Barrier Lower) property by including a thin junction formed on a substrate. CONSTITUTION: A channel layer(33A) is formed on a substrate(31). A gate(41) is formed on the channel layer. A junction area(37A) is protruded from the substrate on both sides of the channel layer. A buried blocking layer(34B) is interposed between the channel layer and the junction area. A thin junction area(44) is formed on the substrate under the junction area.</p> |
