| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve the retention property of a flash memory device due to a space loss by forming an insulation layer on a common source area and one sidewall and the upper side of the gate pattern near the common source before a spacer is formed. CONSTITUTION: A gate pattern(220) is formed on a semiconductor substrate(210) with a device isolation layer. A photoresist pattern(230) is formed to expose a common source area(238) of the semiconductor substrate and the upper side and one sidewall of the gate patterns near the common source area of the semiconductor substrate. A common source is formed by etching a device isolation layer using the photoresist pattern as a mask and performing an implant process. A first insulation layer(250) is formed on the upper side and one sidewall of the gate patterns exposed by the photoresist pattern. The photoresist pattern is removed. A spacer is formed on the sidewalls of the gate patterns.</p> |
