| 摘要 |
PURPOSE: An operation method of a semiconductor memory device is provided to successively read data when reading low and upper bits at the same time by changing the order of reading with the order of selecting the page address for a program. CONSTITUTION: The data respectively saved in low and upper bit pages of a first word line according to the read command reads and is respectively saved in first and second latches(124,125) of a page buffer. The data saved in the first latch is outputted to outside and third data is saved in a third latch(126) of the page buffer. The data respectively saved in low and upper bit pages of a second word line is read and is respectively saved in the first and the second latch. The data saved in the first latch and data saved in the third latch are successively outputted and data saved in the second latch is saved in the third latch.
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