| 摘要 |
<p>The invention relates to a method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates, comprising at least one conductive, semiconductive and/or insulating layer, wherein at least one substrate provided with at least one metal layer and/or with at least one metal-containing layer, in particular a stack of substrates each provided with at least one metal layer and/or with at least one metal-containing layer, is introduced into a process chamber and heated to a predetermined substrate temperature; elemental selenium and/or sulfur vapor from a source located inside and/or outside of the process chamber is passed by the/each metal layer and/or metal-containing layer, in particular by means of a carrier gas, in particular an inert carrier gas, under low vacuum conditions or ambient pressure conditions or excess pressure conditions, so as to react it with selenium and/or sulfur in a targeted chemical reaction; the substrate is heated by forced convection by at least one gas delivery device and/or the elemental selenium and/or sulfur vapor is mixed, in particular homogeneously, by means of forced convection by at least one gas delivery device in the process space and is directed past the substrate. The invention also relates to a process device for performing such a method.</p> |
