| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer capable of suppressing film peeling by an oxide film thickness decline at a wafer outer periphery by CMP in a device process while keeping the high flatness of a wafer surface. SOLUTION: The wafer surface to be used as the device active region of the semiconductor wafer is mirror-polished, the outer periphery of the mirror-polished wafer surface is polished further, and an edge roll-off region having a predetermined roll-off shape equivalent to the edge roll-off of an oxide film to be formed in the device process is formed between the device active region of the wafer surface and a chamfered part formed at a wafer edge. COPYRIGHT: (C)2011,JPO&INPIT |
