CHEMICAL MECHANICAL POLISHING LIQUID

摘要

A chemical-mechanical polishing liquid is disclosed. The polishing liquid comprises a composite abrasive, and a pH adjustor. By increasing the pH value of the polishing liquid and applying the composite abrasive in the polishing liquid, the phenomenon that upon polishing the removal rate of edge is lower than that of central area is decreased, the possibility of damaging a chip in the edge area of wafer is effectively ameliorated, therefore solving the commonly encountered problem of edge removal rate falling fleetly during the process of polishing silica by a silica-sol-based polishing liquid, and improving the uniformity of polishing.