| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to reduce the number of annealing processes to one, thereby simplifying the manufacturing processes. CONSTITUTION: A peri area is made of a high voltage area and a low voltage area. The peri area and a cell area are formed on a semiconductor substrate(100). A plurality of gate patterns is formed on the semiconductor substrate. A spacer film of a multi insulating film structure is formed on a sidewall of a gate pattern. First source/drain areas are formed on the semiconductor substrate. A second source/drain area is formed on the semiconductor substrate. A first LDD area is formed on the semiconductor substrate. A second LDD area is formed on the semiconductor substrate. An annealing process is performed in the first and second source/drain areas and the first and second LDD areas.</p> |
