| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which suppresses damage to a capacitor dielectric film of a ferroelectric capacitor. SOLUTION: The method of manufacturing the semiconductor device includes: a step of forming a first insulation film over a silicon substrate 1; a step of forming a first conducting film 20, a ferroelectric film 21 and a second conductive film on the first insulation film, a step of forming a hard mask 23a on the second conductive film; a step of making an upper electrode 22a etch the second conductive film by using the hard mask 23a as a mask; a step of forming the capacitor dielectric film by patterning the ferroelectric film 21; and making a lower electrode by etching the first conductive film 20 where, in the step of etching the second conductive film, the etching atmosphere contains oxygen gas and does not contain halogen when the ferroelectric film 21 is exposed at the side of the upper electrode 22a. COPYRIGHT: (C)2011,JPO&INPIT |
